Direct graphene growing method

ABSTRACT

A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.13/465,488, filed on May 7, 2012, which claims priority to Korean PatentApplication No. 10-2011-0043074 filed on May 6, 2011 and Korean PatentApplication No. 10-2011-0126279, filed on Nov. 29, 2011, and all thebenefits accruing therefrom under 35 U.S.C. § 119, the contents of whichin their entirety are herein incorporated by reference.

BACKGROUND 1. Field

The present disclosure relates to a method of directly growing graphene,and more particularly, to a method of directly growing graphene on atarget substrate without a transfer process.

2. Description of the Related Art

Generally, graphite is an allotropic form of the element carbon having astructure in which two-dimensional (“2D”) graphene sheets are stacked.There are two allotropic forms with different stacking arrangements,hexagonal and rhombohedral. The carbon atoms of the graphene sheets areconnected to each other in an extended array of hexagonal rings.

Due to high transparency and high conductivity, graphene may beapplicable in a variety of electronic devices, for example, in anelectrode for display devices or solar cells.

Graphene may be prepared by a thermal process with supplying of a carbonsource to a metal catalyst, and may then be separated and transferred toa target substrate, so that an electronic device using the graphene maybe manufactured.

However, during the transfer process, damages or defects, such as tearsor wrinkles, may occur in the graphene, which may negatively affectphysical characteristics of a final electronic device including thegraphene.

SUMMARY

Provided is a method of directly growing graphene on a target substrate.Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to an embodiment of the invention, a method of preparingcrystalline graphene includes performing a first thermal treatmentincluding supplying heat to an inorganic substrate in a reactor;introducing a vapor carbon supply source into the reactor during thefirst thermal treatment to form activated carbon; and binding theactivated carbon on the inorganic substrate to grow the crystallinegraphene.

In an embodiment, the first thermal treatment may be performed in areducing atmosphere.

In an embodiment, the inorganic substrate may include at least one of ametal oxide based substrate, a silica based substrate, a boron nitridebased substrate and a silicon based substrate.

In an embodiment, the inorganic substrate may have at least one of amonocrystalline structure, a polycrystalline structure and an amorphousstructure.

In an embodiment, the inorganic substrate may have a thickness of fromabout 10 nanometers (nm) to about 100 micrometers (μm).

In an embodiment, the inorganic substrate may include a base includingat least one of a silicon-based crystalline base and a sapphirecrystalline base, and a thin film disposed on the base, where the thinfilm has a thickness in a range from about 10 nm to about 1,000 nm.

In an embodiment, the first thermal treatment may be performed at atemperature in a range from about 300° C. to about 2,000° C. for a timeduration in a range from about 0.001 hour to about 1,000 hours.

In an embodiment, the method further may include a cooling process at arate in a range about 10° C. per minute to about 100° C. per minuteafter the first thermal treatment.

In an embodiment, the method further may include performing a secondthermal treatment after the first thermal treatment and the coolingprocess.

In an embodiment, the vapor carbon supply source may include at leastone selected from the group consisting of carbon monoxide, methane,ethane, ethylene, ethanol, acetylene, propane, propylene, butane,butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane,benzene and toluene.

In an embodiment, the method further may include forming agraphitization catalyst layer on the crystalline graphene grown on theinorganic substrate.

In an embodiment, the method further may include performing a secondthermal treatment on the inorganic substrate with the crystallinegraphene and the graphitization catalyst layer thereon such thatcrystallinity of the crystalline graphene is increased.

In an embodiment, the graphitization catalyst may include at least oneselected from the group consisting of nickel (Ni), cobalt (Co), iron(Fe), platinum (Pt), palladium (Pd), gold (Au), aluminum (Al), chromium(Cr), copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo),rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W),uranium (U), vanadium (V) and zirconium (Zr).

In an embodiment, the graphitization catalyst layer may have a thicknessin a range from about 100 nm to about 1,000 nm.

The crystalline graphene may have a D-band to G-band peak intensityratio (I_(D)/I_(G)) of about 0.5 or less.

In an embodiment, the crystalline graphene may have a D-band to G-bandpeak intensity ratio (I_(D)/I_(G)) of from about 0.2 to about 0.001.

According to another embodiment of the invention, agraphene-on-substrate includes an inorganic substrate; and crystallinegraphene disposed on at least one surface of the inorganic substrate,where the crystalline graphene is directly grown on the inorganicsubstrate by a growing process.

In an embodiment, the crystalline graphene may have a D-band to G-bandpeak intensity ratio (I_(D)/I_(G)) of about 0.5 or less.

According to another embodiment of the invention, an electronic deviceincludes the above graphene-on-substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other features will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings of which:

FIG. 1 is a schematic diagram of an embodiment of graphene directlygrown on an inorganic substrate;

FIG. 2 is a schematic diagram illustrating an embodiment of a method ofdirectly growing graphene according to the present disclosure; and

FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versusRaman shift inverse centimeters (cm⁻¹), showing Raman spectra of anembodiment of a graphene sheet prepared in accordance with Example 1.

DETAILED DESCRIPTION

The invention now will be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments areshown. This invention may, however, be embodied in many different forms,and should not be construed as limited to the embodiments set forthherein. Rather, these embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey the scope of theinvention to those skilled in the art. Like reference numerals refer tolike elements throughout.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be present therebetween. In contrast, when an element isreferred to as being “directly on” another element, there are nointervening elements present. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of the present invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willbe further understood that the terms “comprises” and/or “comprising,” or“includes” and/or “including” when used in this specification, specifythe presence of stated features, regions, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, regions, integers, steps,operations, elements, components, and/or groups thereof.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The exemplary term“lower,” can therefore, encompasses both an orientation of “lower” and“upper,” depending on the particular orientation of the figure.Similarly, if the device in one of the figures is turned over, elementsdescribed as “below” or “beneath” other elements would then be oriented“above” the other elements. The exemplary terms “below” or “beneath”can, therefore, encompass both an orientation of above and below.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Embodiments are described herein with reference to cross sectionillustrations that are schematic illustrations of idealized embodiments.As such, variations from the shapes of the illustrations as a result,for example, of manufacturing techniques and/or tolerances, are to beexpected. Thus, embodiments described herein should not be construed aslimited to the particular shapes of regions as illustrated herein butare to include deviations in shapes that result, for example, frommanufacturing. For example, a region illustrated or described as flatmay, typically, have rough and/or nonlinear features. Moreover, sharpangles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present claims.

All methods described herein can be performed in a suitable order unlessotherwise indicated herein or otherwise clearly contradicted by context.The use of any and all examples, or exemplary language (e.g., “suchas”), is intended merely to better illustrate the invention and does notpose a limitation on the scope of the invention unless otherwiseclaimed. No language in the specification should be construed asindicating any non-claimed element as essential to the practice of theinvention as used herein.

The present disclosure will now be described more fully with referenceto the accompanying drawings, in which exemplary embodiments of thedisclosure are shown.

According to an embodiment of the present disclosure, there is provideda method of directly growing crystalline graphene on an inorganicsubstrate. This method of directly growing graphene on the inorganicsubstrate is performed without a separate transfer process, and thus themethod may simplify application processes of the graphene in anelectronic device, suppressing damage of graphene that may occur duringthe transfer process.

In an embodiment, the method of directly growing graphene may includeintroducing a vapor carbon supply source into a reactor during a firstthermal treatment including supplying heat to an inorganic substrate 11(shown in FIG. 1) in the reactor to obtain activated carbon, and formingcrystalline graphene 12 from binding of the activated carbon on theinorganic substrate 12. In such an embodiment, as shown in FIG. 1, thecrystalline graphene 12 directly grown on the inorganic substrate 11 maybe obtained.

The inorganic substrate 11 used in growing the graphene thereon may be acrystalline substrate. In an embodiment, the crystalline substrate maybe monocrystalline or polycrystalline, for example. In an alternativeembodiment, the crystalline substrate may be an amorphous substrate. Inan embodiment, the crystalline inorganic based substrate may have anykind of crystalline plane.

In another embodiment, the inorganic substrate 11 may be, for example,any one of a metal oxide based substrate, a silica based substrate, aboron nitride based substrate and a silicon based substrate, or mayinclude a stack of at least two thereof. In an embodiment, the metaloxide based substrate may include at least one of Al₂O₃, sapphire, TiO₂,ZnO, ZrO₂, HfO₂, MgO, NiO, Co₂O, CuO and FeO, for example, but not beinglimited thereto. In an embodiment, the boron nitride based substrate isa h-BN substrate, for example, but not being limited thereto. In anembodiment, the silica based substrate may include at least one of SiO₂,glass and quartz, for example, but not being limited thereto. In anembodiment, the silicon based substrate may include at least one ofSi(111), Si(100) and p-Si, for example, but not being limited thereto.The inorganic substrate 11 may have a thickness of, for example, fromabout 10 nanometers (nm) to about 100 micrometers (μm).

An embodiment of the method of directly growing graphene may use theinorganic substrate 11. In an embodiment, when having an amorphous orpolycrystalline structure, the inorganic substrate 11 having a thin filmshape and stacked on a base may be used. In an embodiment, the base maybe, for example, a crystalline substrate such as a silicon substrate ora sapphire substrate. The inorganic substrate 11 stacked as a thin filmon the base may be provided by using atomic layer deposition, thermaloxidation, or sputtering, for example. In an embodiment, the inorganicsubstrate in a thin film shape may have a thickness in a range fromabout 10 nm to about 1,000 nm.

In an embodiment, carbon may be supplied as the vapor carbon supplysource thermally treated along with the inorganic substrate. However,any of a variety of materials that may be present in a vapor phase at atemperature of 300° C. or higher may be used as the vapor carbon supplysource. The vapor carbon supply source may be any carbon-containingcompound. In an embodiment, the vapor carbon supply source may be acompound including six or less carbon atoms, a compound including fouror less carbon atoms, or a compound including two or less carbon atoms.In an embodiment, the vapor carbon supply source may include at leastone selected from the group consisting of carbon monoxide, methane,ethane, ethylene, methanol, ethanol, acetylene, propane, propylene,butane, butadiene, pentane, cyclopentadiene, hexane, cyclohexane,benzene and toluene.

The vapor carbon supply source may be injected into a reactor containingthe inorganic substrate at a constant pressure. In an embodiment, thevapor carbon supply source may be injected without an additionalmaterial. In an alternative embodiment, the vapor carbon supply sourcemay be injected with an inert gas, such as helium, argon, or nitrogen,for example.

In an embodiment, the first thermal treatment may be performed in areducing atmosphere or a reduction atmosphere. In such an embodiment,some components of the inorganic substrate may be reduced in thereducing atmosphere, forming a graphitization catalyst that facilitatesformation of graphene. In an embodiment, the inorganic substrate is ametal oxide based film, and the metal oxide on a surface of the metaloxide based film may be reduced into a metal, which may then serve as agraphitization catalyst that facilitates formation of the crystallinegraphene. In an embodiment, a silicon based substrate is used as theinorganic substrate, and silica present on part of a surface of thesilicon based substrate may be reduced into silicon, which may thenserve as a graphitizing catalyst.

In an embodiment, as described above, metal reduced from the metal oxidepresent on the surface of the inorganic substrate serves as agraphitization catalyst in generating graphene. In such an embodiment,the metal present on the surface of the inorganic substrate is in anatomic level such that the metal may be identified on a crystallineplane of the inorganic substrate surface by in-situ equipment, forexample, a low-energy electron diffraction (“LEED”) system.

In an embodiment, a boron nitride based substrate, for example, a h-BNsubstrate, is used as the inorganic substrate, and graphene may be growndirectly on the h-BN substrate by directly adsorbing a carbonaceouscomponent onto the h-BN substrate without a graphitization catalystsince the h-BN substrate has a similar crystalline lattice structure asthe crystalline lattice structure of graphene. In such an embodiment,where the h-BN substrate is used as the inorganic substrate, graphenemay be formed under a reducing atmosphere or an inert atmosphere.

In an embodiment, the reducing atmosphere may be created using hydrogengas, ammonia gas, nitrogen gas, and/or argon gas alone or in combinationthereof, for example. In such an embodiment, hydrogen gas and/or ammoniagas are mixed with nitrogen gas and/or argon gas, and the hydrogen gasand/or ammonia gas may be used in about 0 to about 100 volume % of atotal volume of the chamber. In an embodiment, for example, the hydrogengas and/or ammonia gas may be used from about 0.01 volume % to about 50volume %, or from about 0.01 volume % to about 10 volume % of the totalvolume of the chamber.

In an embodiment, the first thermal treatment described above isperformed in generating crystalline graphene. In such an embodiment, thefirst thermal treatment may be performed at a temperature from about300° C. to a melting point of the inorganic substrate. In an embodiment,and first thermal treatment may be performed at a temperature from about300° C. to about 2,000° C., and in another embodiment, at a temperaturefrom about 500° C. to about 1,500° C.

In an embodiment, the first thermal treatment may be maintained at apredetermined temperature for a predetermined time, and thus generationof the graphene may be controlled. The longer the time period of thethermal treatment, the larger the amount of generated graphene may be,and the larger the thickness of the graphene may be. In such anembodiment, the shorter the time period of the thermal treatment, thesmaller the thickness of the graphene may be. In an embodiment, the timetaken to perform the thermal treatment may be determined, in addition tothe type and supply pressure of the vapor carbon source and the size ofthe chamber to obtain a predetermined thickness of the graphene. In anembodiment, the first thermal treatment may be maintained for from about0.001 hour to about 1,000 hours. In an embodiment, the first thermaltreatment may be maintained for from about 10 seconds to about 1 hour.

In an embodiment, a heat source for the first thermal treatment may beinduction heat, radiant heat, a laser, infrared (“IR”) heat, microwaves,plasma, ultraviolet (“UV”) rays or surface plasmon heat, for example,but not being limited thereto. In an embodiment, the heat source may beattached to the chamber to increase the temperature in the chamber to apredetermined temperature.

In an embodiment, a selected cooling process is performed on theresulting product obtained after the first thermal treatment. In such anembodiment, the graphene is uniformly grown and arranged on thesubstrate by the selected cooling process. In an embodiment, the coolingprocess may be performed, for example, at about 10° C. to about 100° C.per minute. In an embodiment, the cooling process may be a naturalcooling process, which may be implemented by stopping operation of aheat source or by removing the heat source from the reactor.

The crystalline graphene obtained through the cooling process may have athickness in a range from one to about three hundred layers. In anembodiment, the graphene may have a thickness in a range from one toabout sixty layers, and in some embodiments, a thickness in a range fromone to about fifteen layers, and in some other embodiments, a thicknessin a range from one to about 10 layers.

In an embodiment, each of the first thermal treatment and the coolingprocess may be performed once. In an embodiment, the first thermaltreatment and the cooling process may be repeated several times togenerate high-density multi-layered graphene. In such an embodiment,crystallinity of the crystalline graphene may be improved by repeatingthe first thermal process twice or three times.

In an embodiment, as described above, the crystalline graphene 12 isprovided, e.g., formed, on the inorganic substrate 11 by the firstthermal treatment.

In an embodiment, after growing the crystalline graphene directly on theinorganic substrate, a second thermal treatment may be performed.Hereinafter, the second thermal treatment will now be described indetail. In an embodiment, the second thermal treatment may be performedafter the first thermal treatment and cooling process, and in anotherembodiment, may be performed after further formation of a graphitizationcatalyst layer on the crystalline graphene.

In an embodiment, the graphitization catalyst layer 13 may be formed onthe crystalline graphene 12, as illustrated in FIG. 2. In such anembodiment, the graphitization catalyst layer 13 directly contacts thecrystalline graphene 12, and thus helps carbon atoms link together toform a planar hexagonal structure, such that the crystallinity of thecrystalline graphene 12 is substantially improved.

In an embodiment, the graphitization catalyst layer 13 may include acatalyst, which is used to synthesize graphite, induce a carbonizationreaction, or prepare a carbon nanotube. In an embodiment, the catalystmay include at least one metal selected from the group consisting ofnickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), palladium (Pd), gold(Au), aluminum (Al), chromium (Cr), copper (Cu), magnesium (Mg),manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum(Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V) andzirconium (Zr), for example. In an embodiment, the graphitizationcatalyst layer 13 may fixed by a method, for example, by physicaldeposition, chemical deposition, or sputtering.

In an embodiment, a thickness of the graphitization catalyst layer 13may be in a range from about 100 nm to about 1,000 nm. In such anembodiment, where the thickness of the graphitization catalyst layer 13is in the range from about 100 nm to about 1,000 nm, the crystallinityof the graphene is substantially enhanced.

In an embodiment, after the formation of the graphitization catalystlayer 13, the second thermal treatment may be further performed suchthat highly crystalline graphene with improved crystallinity isobtained.

In an embodiment, the second thermal treatment may be performed in aninert gas atmosphere containing, for example, helium, argon, ornitrogen. In an alternative embodiment, the second thermal treatment maybe performed with hydrogen gas. In an embodiment, the second thermaltreatment may be performed together with the inert gas and hydrogen gas,where a concentration of the inert gas may be in a range from about 60volume % to about 65 volume % of a total volume of the chamber, and aconcentration of hydrogen gas may be in a range from about 5 volume % toabout 40 volume % of the total volume of the chamber.

In an embodiment, the second thermal treatment may be performed at atemperature in a range from about 300° C. to about 2,000° C., and in analternative embodiment, at a temperature in a range from about 500° C.to about 1,500° C., and in another alternative embodiment, at atemperature in a range from about 800° C. to about 1,000° C.

In an embodiment, the second thermal treatment may be maintained withinthe above-mentioned temperature ranges for a predetermined time suchthat generation of the graphene may be controlled. In such anembodiment, crystallinity of the crystalline graphene is improved bymaintaining the second thermal treatment during substantially long timeduration, and highly crystalline graphene 14 may be prepared bycontrolling the predetermined time for maintaining the second thermaltreatment. In an embodiment, the second thermal treatment may bemaintained for from about 0.001 hour to about 100 hours. In anotherembodiment, the second thermal treatment may be maintained for fromabout 1 minute to about 12 hours.

In an embodiment, a heat source for the second thermal may be inductionheat, radiant heat, a laser, IR heat, microwaves, plasma, UV rays, orsurface plasmon heat, for example, but not being limited thereto. In anembodiment, such a heat source may be attached to the chamber toincrease the temperature in the chamber to a predetermined temperature.

In an embodiment, a selected cooling process is performed on theresulting product obtained after the second thermal treatment. In anembodiment, the cooling process may be performed at a rate of about 10°C. to about 100° C. per minute. In an embodiment, the cooling processmay be a natural cooling process, which may be implemented by stoppingoperation of a heat source or by removing the heat source from thereactor.

In an embodiment, each of the second thermal treatment and the coolingprocess may be performed once. In an alternative embodiment, the secondthermal treatment and the cooling process may be repeated several timesto generate graphene with improved crystallinity.

In an embodiment, after the second thermal treatment, removing thegraphitization catalyst layer may be performed. Since the graphitizationcatalyst is in the form of a metal layer, the graphitization catalystmay be removed by acid treatment. In an embodiment, the acid treatmentmay be performed using hydrochloric acid, sulfuric acid, nitric acid, ora mixed solution thereof, for example, in a predetermined concentration.In an embodiment, a resulting product of the second thermal treatmentmay be immersed in the above-mentioned acid solutions for apredetermined time such that the graphitization catalyst layer isremoved.

Crystallinity of the graphene grown directly on the inorganic substratemay be determined by Raman spectroscopy. In general, Raman spectra ofgraphene include a G-band near about 1,580 inverse centimeters (cm⁻¹)region and a D-band near about 1,340 cm⁻¹ region. The G-band is found incommon in graphite based materials, and is also referred to as a G modeor G peak, where “G” is abbreviation for graphite. The D-band is fromdefects in crystals, and is typically found in edge areas of graphenesamples or in graphene samples with many defects. Thus, a high peakintensity of the D-band may indicate that the graphene includes a largenumber of defects and has low crystallinity, and a low peak intensity ofthe D-band may indicate that the graphene includes a small number ofdefects and has high crystallinity.

In Raman spectroscopy, an intensity of the D-band is defined as arelative ratio to an intensity of the G-band. In Raman spectroscopy,crystallinity of the graphene may be determined from a relative ratio ofthe D-band to the G-band.

When crystalline graphene obtained by an embodiment of direct growingmethod, a relative intensity of the D-band to the G-band may be about 2or less. In an embodiment, the relative intensity of the D-band to theG-band may be about 0.5 or less. In another embodiment, the relativeintensity of the D-band to the G-band may be about 0.2 or less. Inanother embodiment, the relative intensity of the D-band to the G-bandmay be may be in a range from about 0.2 to about 0.001. When a D-band isnot found in graphene, which means high crystallinity, a relative ratioof the D-band to the G-band of the graphene may be zero.

The term “graphene” as used herein refers to a sheet of polycyclicaromatic molecules of a plurality of covalently bonded carbon atoms,which is distinguished from cylindrical carbon nanotubes. The covalentlybonded carbon atoms may form a six-membered ring as a repeating unit,and may further include at least one of a five-membered ring and/or aseven-membered ring. Thus, the graphene appears as a single layer ofcovalently bonded carbon atoms, and each carbon atom may be sp2hybridized. A plurality of graphene layers is often referred to asgraphite in the art. However, for convenience, “graphene,” as usedherein, may include one or more layers of graphene. Thus, as usedherein, graphene may refer to a single layer of carbon, or also mayrefer to a plurality of stacked single layers of graphene, for example,about three hundred layers or less of graphene. Graphene normally hasside terminals saturated with hydrogen atom.

In an embodiment, the above-described direct growing method is performedwithout a separate transfer process, and the crystalline graphene growndirectly on the inorganic substrate by the method has a reduced numberof defects when applied in an electronic device.

The crystalline graphene may have a large area with lateral andlongitudinal lengths, each of which is about 1 millimeter (mm) orgreater, or about 10 mm or greater, for example. In an embodiment, eachof the lateral and longitudinal lengths of the crystalline graphene isin a range from about 10 mm to about 1,000 mm. In an embodiment, each ofthe lateral and longitudinal lengths of the crystalline graphene may begreater than 1,000 mm. The size of the inorganic substrate may beadjusted to obtain graphene with a large area. In such an embodiment,since a carbon source is supplied in vapor form, the size of thesubstrate may not be restricted. In such an embodiment, athree-dimensional substrate may be used.

The crystalline graphene grown on the inorganic substrate may have avariety of applications. Due to high conductivity and high uniformity ofthe graphene layer, the graphene may be used as a transparent electrode.In an embodiment of a solar cell with an electrode on a substrate, thesolar cell may include the graphene as the electrode thereof such thatthe electrode allows transmission of light. The highly crystallinegraphene-on-the inorganic substrate may exhibit high conductivity whenused as a transparent electrode. In an embodiment of a display device,the highly crystalline graphene-on-substrate, used as a panel conductingthin layer thereof, may provide substantially high conductivity and mayimprove the transmission of light.

In an embodiment, the highly crystalline graphene-on-substrate may beused as a channel for memory devices, sensors or electronic paper, forexample.

One or more embodiments will now be described in more detail withreference to the following examples. However, these examples are forillustrative purposes only and are not intended to limit the scope ofthe one or more embodiments.

Example 1

A SiO₂ thin film having a thickness of about 300 nm was formed on asilicon substrate (Si(100)) having a diameter of about 2 inches and athickness of about 525 μm using thermal oxidation. The silicon substratewith the SiO₂ thin film thereon was placed in a chamber, and was thenthermally treated at about 1,100° C. for about 10 minutes using aninductive heating source (a first thermal treatment) while hydrogen gasand nitrogen gas were supplied into the chamber at about 5 standardcubic centimeters per minute (sccm) and about 4,970 sccm, respectively.Subsequently, acetylene gas was further injected into the chamber atabout 25 sccm for about 10 minutes, thereby growing graphene. Theinductive heating source was removed from the chamber, which was thennaturally cooled such that crystalline graphene was formed on the SiO₂thin film.

Example 2

An Al₂O₃ thin film having a thickness of about 50 nm was formed on asilicon substrate (Si(100)) having a diameter of about 2 inches and athickness of about 525 μm using atomic layer deposition. The siliconsubstrate with the Al₂O₃ thin film formed was placed in a chamber, andwas then thermally treated at about 1,100° C. for about 10 minutes usingan inductive heating source (the first thermal treatment) while hydrogengas and nitrogen gas were supplied into the chamber at about 5 sccm andabout 4,970 sccm, respectively. Subsequently, acetylene gas was furtherinjected into the chamber at about 25 sccm for about 10 minutes, therebygrowing graphene. The inductive heating source was removed from thechamber, which was then naturally cooled such that crystalline graphenewas formed on the Al₂O₃ thin film.

Example 3

A planar h-BN substrate having a thickness of about 0.5 μm and a size ofabout 1 centimeter (cm) by about 1 centimeter (cm) was placed in achamber, and was then thermally treated at about 1,100° C. for about 10minutes using an inductive heating source (the first thermal treatment)while hydrogen gas and nitrogen gas were supplied into the chamber atabout 5 sccm and about 4,970 sccm, respectively. Subsequently, acetylenegas was further injected into the chamber at about 25 sccm for about 10minutes, thereby growing graphene. The inductive heating source wasremoved from the chamber, which was then naturally cooled so thatcrystalline graphene was formed on the h-BN substrate.

Example 4

A HfO₂ thin film having a thickness of about 50 nm was formed on asilicon substrate (Si(100)) having a diameter of about 2 inches and athickness of about 525 μm using atomic layer deposition. The siliconsubstrate with the HfO₂ thin film formed was placed in a chamber, andwas then thermally treated at about 1,100° C. for about 10 minutes (thefirst thermal treatment) using an inductive heating source whilehydrogen gas and nitrogen gas were supplied into the chamber at about 5sccm and about 4,970 sccm, respectively. Subsequently, acetylene gas wasfurther injected into the chamber at about 25 sccm for about 10 minutes,thereby growing graphene. The inductive heating source was removed fromthe chamber, which was then naturally cooled so that crystallinegraphene was formed on the HfO₂ thin film.

Example 5

A ZnO thin film having a thickness of about 50 nm was formed on asilicon substrate (Si(100)) having a diameter of about 2 inches and athickness of about 525 μm using atomic layer deposition. The siliconsubstrate with the ZnO thin film formed was placed in a chamber, and wasthen thermally treated at about 1,100° C. for about 10 minutes using aninductive heating source (the first thermal treatment) while hydrogengas and nitrogen gas were supplied into the chamber at about 5 sccm andabout 4,970 sccm, respectively. Subsequently, acetylene gas was furtherinjected into the chamber at about 25 sccm for about 10 minutes, therebygrowing graphene. The inductive heating source was removed from thechamber, which was then naturally cooled such that crystalline graphenewas formed on the ZnO thin film.

Example 6

A planar quartz substrate having a thickness of about 0.5 μm and a sizeof about 2.5 cm by about 2.5 cm was placed in a chamber, and was thenthermally treated at about 1,100° C. for about 10 minutes using aninductive heating source (the first thermal treatment) while hydrogengas and nitrogen gas were supplied into the chamber at about 5 sccm andabout 4,970 sccm, respectively. Subsequently, acetylene gas was furtherinjected into the chamber at about 25 sccm for about 10 minutes, therebygrowing graphene. The inductive heating source was removed from thechamber, which was then naturally cooled such that crystalline graphenewas formed on the quartz substrate.

Example 7

A silicon substrate (Si(111)) having a thickness of about 575 μm and asize of 1 cm by 1 cm was placed in a chamber, and was then thermallytreated at about 1,100° C. for about 10 minutes using an inductiveheating source (the first thermal treatment) while hydrogen gas andnitrogen gas were supplied into the chamber at about 5 sccm and about4,970 sccm, respectively. Subsequently, acetylene gas was furtherinjected into the chamber at about 25 sccm for about 10 minutes, therebygrowing graphene. The inductive heating source was removed from thechamber, which was then naturally cooled so that crystalline graphenewas formed on the silicon substrate.

Example 8

A sapphire (0001) substrate having a thickness of about 300 μm and adiameter of about 2 inches was placed in a chamber, and was thenthermally treated at about 1,100° C. for about 10 minutes using aninductive heating source (the first thermal treatment) while hydrogengas and nitrogen gas were supplied into the chamber at about 10 sccm andabout 4,940 sccm, respectively. Subsequently, acetylene gas was furtherinjected into the chamber at about 50 sccm for about 10 minutes, therebygrowing graphene. The inductive heating source was removed from thechamber, which was then naturally cooled such that crystalline graphenewas formed on the sapphire (0001) substrate.

Subsequently, copper was deposited on the crystalline graphene usinge-beam evaporation to form a copper catalyst layer having a thickness ofabout 500 nm.

The substrate with the copper catalyst layer formed was furtherthermally treated at about 1,000° C. for about 60 minutes to obtainhighly crystalline graphene (the second thermal treatment).

Subsequently, the substrate with the highly crystalline graphene wasimmersed in an about 0.1 mol (M) HCl solution for about 24 hours,thereby removing the nickel catalyst layer.

A result of analyzing the highly crystalline graphene is shown in FIG.3. Referring to FIG. 3, the highly crystalline graphene may have aD-band to G-band peak intensity ratio (I_(D)/I_(G)) of about 0.1 orless, indicating high crystallinity. Herein, the D-band to G-band peakintensity ratio (I_(D)/I_(G)) means a ratio of D-band peak intensitywith respect to the D-band peak intensity.

Example 9

A sapphire (0001) substrate having a thickness of about 300 μm and adiameter of about 2 inches was placed in a chamber, and was thenthermally treated at about 1,100° C. for about 10 minutes using aninductive heating source (the first thermal treatment) while hydrogengas and nitrogen gas were supplied into the chamber at about 10 sccm andabout 4,930 sccm, respectively. Subsequently, acetylene gas was furtherinjected into the chamber at about 200 sccm for about 10 minutes,thereby growing graphene. The inductive heating source was removed fromthe chamber, which was then naturally cooled such that crystallinegraphene was formed on the sapphire substrate.

Subsequently, nickel was deposited on the crystalline graphene usinge-beam evaporation to form a nickel catalyst layer having a thickness ofabout 300 nm. The substrate with the nickel catalyst layer formed wasfurther thermally treated at about 1,000° C. for about 60 minutes toobtain highly crystalline graphene (a second thermal treatment).

Subsequently, the substrate with the highly crystalline graphene wasimmersed in an about 0.1 M HCl solution for about 24 hours, therebyremoving the nickel catalyst layer.

A result of analyzing the highly crystalline graphene is shown in FIG.4. Referring to FIG. 4, the highly crystalline graphene was found tohave a D-band to G-band peak intensity ratio (I_(D)/I_(G)) of about 0.1or less, indicating high crystallinity.

Example 10

A SiO₂ thin film having a thickness of about 300 nm was formed on asilicon substrate (Si(100)) having a diameter of about 2 inches and athickness of about 525 μm using thermal oxidation. The silicon substratewith the SiO₂ thin film formed was placed in a chamber, and was thenthermally treated at about 1,100° C. for about 10 minutes using aninductive heating source while hydrogen gas and nitrogen gas weresupplied into the chamber at about 5 sccm and about 4,970 sccm,respectively. Subsequently, acetylene gas was further injected into thechamber at about 25 sccm for about 10 minutes, thereby growing graphene.The inductive heating source was removed from the chamber, which wasthen naturally cooled so that crystalline graphene was formed on theSiO₂ thin film.

Subsequently, nickel was deposited on the crystalline graphene usinge-beam evaporation to form a nickel catalyst layer having a thickness ofabout 300 nm. The substrate with the nickel catalyst layer formed wasfurther thermally treated at about 900° C. for about 10 minutes toobtain highly crystalline graphene (the second thermal treatment).

Subsequently, the substrate with the highly crystalline graphene wasimmersed in an about 0.1 M HCl solution for about 24 hours, therebyremoving the nickel catalyst layer.

A result of analyzing the highly crystalline graphene is shown in FIG.5. Referring to FIG. 5, the highly crystalline graphene was found tohave a D-band to G-band peak intensity ratio (I_(D)/I_(G)) of about 0.1or less, indicating high crystallinity.

Example 11

A sapphire (0001) substrate having a thickness of about 300 μm and adiameter of about 2 inches was placed in a chamber, and was thenthermally treated at about 1,100° C. for about 10 minutes using aninductive heating source (the first thermal treatment) while hydrogengas and nitrogen gas were supplied into the chamber at about 10 sccm andabout 4,930 sccm, respectively. Subsequently, acetylene gas was furtherinjected into the chamber at about 200 sccm for about 10 minutes,thereby growing graphene. The inductive heating source was removed fromthe chamber, which was then naturally cooled such that crystallinegraphene was formed on the sapphire substrate.

Subsequently, a nickel-copper alloy was deposited on the crystallinegraphene using e-beam evaporation to form a nickel-copper alloy catalystlayer having a thickness of about 300 nm. The substrate with thenickel-copper alloy catalyst layer formed was further thermally treatedat about 1,000° C. for about 60 minutes to obtain highly crystallinegraphene (the second thermal treatment).

Subsequently, the substrate with the highly crystalline graphene wasimmersed in an about 0.1 M HCl solution for about 24 hours, therebyremoving the nickel catalyst layer.

As described above, according to the one or more of the aboveembodiments of the present disclosure, crystalline graphene may be growndirectly on an inorganic substrate without a separate transfer process.The crystalline graphene on the inorganic substrate with reduced numberof defects in the graphene may be used in a variety of devices.

It should be understood that the exemplary embodiments described hereinshould be considered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

What is claimed is:
 1. Crystalline graphene obtained by a methodcomprising: performing a first thermal treatment including supplyingheat to an inorganic substrate in a reactor; introducing a vapor carbonsupply source into the reactor during the first thermal treatment toform activated carbon; and binding the activated carbon on the inorganicsubstrate to grow the crystalline graphene; wherein the inorganicsubstrate includes a metal oxide based substrate; wherein the metaloxide includes at least one of TiO₂, ZnO, MgO, NiO, Co₂O, CuO and FeO;wherein the crystalline graphene has a D-band to G-band peak intensityratio (I_(D)/I_(G)) of about 0.5 or less.
 2. A graphene-on-substratecomprising: an inorganic substrate; and crystalline graphene disposed onat least one surface of the inorganic substrate, wherein the crystallinegraphene is directly grown on the inorganic substrate by a growingprocess; and wherein the inorganic substrate includes any one of themetal oxide based substrate, a silica based substrate, and a siliconbased substrate, or a stack of at least two thereof; wherein the metaloxide includes at least one of TiO₂, ZnO, MgO, NiO, Co₂O, CuO and FeO.3. The graphene-on-substrate of claim 2, wherein the crystallinegraphene has a D-band to G-band peak intensity ratio (I_(D)/I_(G)) ofabout 0.5 or less.
 4. An electronic device comprising thegraphene-on-substrate of claim 2.